An envelope function description of the quantum well formed in AlxGa1-xAsySb1-y/InAs/AlxGa1-xAsySb1-y heterostructures
Identifieur interne : 019671 ( Main/Repository ); précédent : 019670; suivant : 019672An envelope function description of the quantum well formed in AlxGa1-xAsySb1-y/InAs/AlxGa1-xAsySb1-y heterostructures
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Abstract
Schrödinger and Poisson equations are solved self-consistently to calculate the quantum mechanical properties of AlGaAsSb/InAs/AlGaAsSb single quantum wells formed in high electron mobility transistors. The two dimensional electron gas (2DEG) distribution is calculated and shows excellent confinement both at room temperature and at 77 K. The variation of the average distance of the electron cloud, from the first heterointerface, with the 2DEG concentration is a strong function of the quantum well (QW) width. A minimum 2DEG concentration threshold, dictated by the QW width and the unintentional doping level of the substrate, exists at room temperature. This effect may prohibit the pinching-off of the channel at room temperature, especially for wide QWs. © 1996 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">An envelope function description of the quantum well formed in Al<sub>x</sub>Ga<sub>1-x</sub>As<sub>y</sub>Sb<sub>1-y</sub>/InAs/Al<sub>x</sub>Ga<sub>1-x</sub>As<sub>y</sub>Sb<sub>1-y</sub> heterostructures</title><author><name sortKey="Anwar, A F M" uniqKey="Anwar A">A. F. M. Anwar</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Electrical and Systems Engineering Department, The University of Connecticut, Storrs, Connecticut 06269-2157</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Electrical and Systems Engineering Department, The University of Connecticut, Storrs</wicri:cityArea></affiliation></author><author><name sortKey="Webster, R T" uniqKey="Webster R">R. T. Webster</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electromagnetics and Reliability Directorate, Rome Laboratory, Hanscom AFB, Massachusetts 01731-3010</s1><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Massachusetts</region></placeName><wicri:cityArea>Electromagnetics and Reliability Directorate, Rome Laboratory, Hanscom AFB</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0114978</idno><date when="1996-12-15">1996-12-15</date><idno type="stanalyst">PASCAL 97-0114978 AIP</idno><idno type="RBID">Pascal:97-0114978</idno><idno type="wicri:Area/Main/Corpus">018925</idno><idno type="wicri:Area/Main/Repository">019671</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7320D</term><term>7340K</term><term>8530T</term><term>Etude théorique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Schrödinger and Poisson equations are solved self-consistently to calculate the quantum mechanical properties of AlGaAsSb/InAs/AlGaAsSb single quantum wells formed in high electron mobility transistors. The two dimensional electron gas (2DEG) distribution is calculated and shows excellent confinement both at room temperature and at 77 K. The variation of the average distance of the electron cloud, from the first heterointerface, with the 2DEG concentration is a strong function of the quantum well (QW) width. A minimum 2DEG concentration threshold, dictated by the QW width and the unintentional doping level of the substrate, exists at room temperature. 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